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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BF840 NPN medium frequency transistor
Product specification Supersedes data of 1998 Dec 02 1999 Apr 12
Philips Semiconductors
Product specification
NPN medium frequency transistor
FEATURES * Low current (max. 25 mA) * Low voltage (max. 40 V). APPLICATIONS * AM mixers * IF amplifiers in AM/FM receivers. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF840 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. Fig.1 MARKING CODE(1) NC
Top view
handbook, halfpage
BF840
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - -65 MIN. MAX. 40 40 4 25 25 250 +150 150 +150 V V V mA mA mW C C C UNIT
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN medium frequency transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE VBE Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain base-emitter voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 20 V IC = 0; VEB = 4 V IC = 1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 0; VCB = 10 V; f = 1 MHz IC = 1 mA; VCE = 10 V; f = 100 MHz - - 67 675 - - MIN. - - - 725 0.3 380 TYP. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
BF840
UNIT K/W
MAX. 100 100 222 775 - -
UNIT nA nA mV pF MHz
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN medium frequency transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BF840
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Apr 12
4
Philips Semiconductors
Product specification
NPN medium frequency transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BF840
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 12
5
Philips Semiconductors
Product specification
NPN medium frequency transistor
NOTES
BF840
1999 Apr 12
6
Philips Semiconductors
Product specification
NPN medium frequency transistor
NOTES
BF840
1999 Apr 12
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/04/pp8
Date of release: 1999 Apr 12
Document order number:
9397 750 05582

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